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NIELIT 2017 OCT Scientific Assistant A (IT) - Section D: 11
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closed as a duplicate of: NIELIT 2017 OCT Scientific Assistant A (CS) - Section D: 11

In MOSFET fabrication, the channel; length is defined during the process of

  1. Isolation oxide growth
  2. Channel stop implantation
  3. Poly-silicon gate patterning
  4. Lithography step leading to the contact pad
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